Title :
Optically activated pin diode switch
Author :
Rosen, A. ; Srabile, P. ; Janton, W. ; Gombar, A. ; McShea, J. ; Buckingham, R.A. ; Rosenberg, A. ; Herczfeld, P. ; Bahasadri, A.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm×5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon activation with 200 W of optical power (the pulse width was 10 μs). The same device, while being pulsed-biased to 2.0 kV, has demonstrated 20 A pulses (100 ns pulse width) with less than 10 ns risetime. The laser peak power was 500 W
Keywords :
p-i-n diodes; photodiodes; semiconductor switches; 10 A; 1000 V; 2 kV; 2-D diode laser array; 20 A; Si pin diode; optical source; optically activated pin diode switch; pulsed-biased; Diode lasers; Optical arrays; Optical design; Optical device fabrication; Optical pulses; Optical switches; Semiconductor laser arrays; Space vector pulse width modulation; Testing; Voltage;
Conference_Titel :
Power Modulator Symposium, 1988. IEEE Conference Record of the 1988 Eighteenth
Conference_Location :
Hilton Head, SC
DOI :
10.1109/MODSYM.1988.26273
