12.5 Gbit/s data rate fiber transmission using single-mode selectively oxidized GaAs VCSELs at λ=850 nm

Author

Mederer, F. ; Jung, C. ; Jäger, R. ; Kicherer, M. ; Michalzik, R. ; Schnitzer, P. ; Wiedenmann, D. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

2

fYear

1999

fDate

1999

Firstpage

697

Abstract

We report 12.5 Gbit/s data transmission over 100 m multimode fiber (MMF) and 1 km single-mode fiber (SMF) using single-mode selectively oxidized GaAs VCSELs emitting at 850 nm. In both cases the bit-error rate (BER) remains better than 10^-11 for pseudo-random bit sequence (PRBS) transmission. The obtained results clearly indicate that GaAs VCSELs are attractive transmitters for high speed fiber optic interconnects. A schematic of the selectively oxidized top emitting GaAs VCSEL is shown-the one-wavelength thick inner cavity contains three active GaAs-Al_0.2Ga_0.8As quantum wells

Keywords

III-V semiconductors; aluminium compounds; error statistics; gallium arsenide; optical fibre LAN; optical transmitters; quantum well lasers; surface emitting lasers; 1 km; 100 m; 12.5 Gbit/s; 12.5 Gbit/s data rate fiber transmission; 850 nm; GaAs-Al_0.2Ga_0.8As; bit-error rate; high speed fiber optic interconnects; multimode fiber; one-wavelength thick inner cavity con; pseudo-random bit sequence transmission; single-mode fiber; single-mode selectively oxidized GaAs VCSEL; three active GaAs-Al_0.2Ga_0.8As quantum wells; transmitters; Bandwidth; Bit error rate; Gallium arsenide; Indium gallium arsenide; Optical fiber LAN; Optical modulation; Optical sensors; Oxidation; Power generation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811918

Filename

811918