Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

Author

Liu, Yaocheng ; Gluschenkov, Oleg ; Li, Jinghong ; Madan, Anita ; Ozcan, Ahmet ; Kim, Byeong ; Dyer, Tom ; Chakravarti, Ashima ; Chan, Kevin ; Lavoie, Christian ; Popova, Irene ; Pinto, Teresa ; Rovedo, Nivo ; Luo, Zhijiong ; Loesing, Rainer ; Henson, Wil

Author_Institution

IBM Semicond. R&D Center, Hopewell

fYear

2007

fDate

12-14 June 2007

Firstpage

44

Lastpage

45

Abstract

Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.

Keywords

CMOS integrated circuits; MOSFET; electron mobility; silicon; solid phase epitaxial growth; CMOS process; NFET; Si; channel MOSFET; drive enhancement; electron mobility; solid phase epitaxy; uniaxial tensile stress; Electron beams; Electron mobility; Epitaxial growth; MOSFETs; Silicon; Solids; Strain control; Stress measurement; Tensile strain; Tensile stress; MOSFET; mobility and solid phase epitaxy; silicon carbon; strained Si;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339720

Filename

4339720