Intensity noise properties of long wavelength triangular ring lasers

Author

Ji, C. ; Ballantyne, J.M.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

2

fYear

1999

fDate

1999

Firstpage

730

Abstract

Summary form only given. High spectral purity, low noise semiconductor lasers are desirable for long distance telecommunication applications. We have previously reported long wavelength InGaAsP-InP triangular ring lasers operating at 1.3 μm. These ring lasers exhibit very high side-mode suppression-ratio (SMSR), that is significantly higher than FP lasers fabricated on the same chip. In general, two counter-propagating circulating laser modes can operate within the cavity, producing two separate output beams as shown. Here we report unusual ring laser relative intensity noise (RIN) behaviors for the first time

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser mirrors; laser modes; laser noise; laser transitions; ridge waveguides; ring lasers; semiconductor lasers; waveguide lasers; 1.3 mum; InGaAsP-InP; counter-propagating circulating laser modes; high spectral purity; intensity noise properties; laser diodes; laser mirrors; long distance telecommunication applications; long wavelength InGaAsP-InP triangular ring lasers; long wavelength triangular ring lasers; low noise semiconductor lasers; ring laser relative intensity noise; ring lasers; very high side-mode suppression-ratio; Fiber lasers; Frequency; Laser beams; Laser modes; Laser noise; Low-frequency noise; Mirrors; Ring lasers; Semiconductor device noise; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-5634-9

Type

conf

DOI

10.1109/LEOS.1999.811941

Filename

811941