DocumentCode
3485264
Title
The effect of radiation defects on the localization of nitrogen implanted into silicon
Author
Danilin, A.B. ; Scherbachev, K.D. ; Bublik, V.T. ; Saraikin, V.V.
Author_Institution
Centre for Anal. of Substances, Moscow, Russia
fYear
1996
fDate
16-21 Jun 1996
Firstpage
672
Lastpage
674
Abstract
It has been shown using SIMS and X-ray diffraction that, during annealing, the surface-oriented mass transport of nitrogen implanted into silicon is affected by interstitial radiation defects. The mass transport is much more intense after high temperature implantation and becomes predominant if the substrate was preliminarily bombarded with argon ions
Keywords
X-ray diffraction; annealing; doping profiles; elemental semiconductors; interstitials; ion beam effects; ion implantation; nitrogen; secondary ion mass spectra; silicon; Ar ion bombardment; N concentration profiles; SIMS; Si:N; X-ray diffraction; annealing; high temperature implantation; interstitial radiation defects; ion implantation; localization; radiation defects; surface-oriented mass transport; Annealing; Atomic layer deposition; Atomic measurements; Impurities; Lattices; Nitrogen; Optical reflection; Silicon; Temperature; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586496
Filename
586496
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