Title :
The effect of radiation defects on the localization of nitrogen implanted into silicon
Author :
Danilin, A.B. ; Scherbachev, K.D. ; Bublik, V.T. ; Saraikin, V.V.
Author_Institution :
Centre for Anal. of Substances, Moscow, Russia
Abstract :
It has been shown using SIMS and X-ray diffraction that, during annealing, the surface-oriented mass transport of nitrogen implanted into silicon is affected by interstitial radiation defects. The mass transport is much more intense after high temperature implantation and becomes predominant if the substrate was preliminarily bombarded with argon ions
Keywords :
X-ray diffraction; annealing; doping profiles; elemental semiconductors; interstitials; ion beam effects; ion implantation; nitrogen; secondary ion mass spectra; silicon; Ar ion bombardment; N concentration profiles; SIMS; Si:N; X-ray diffraction; annealing; high temperature implantation; interstitial radiation defects; ion implantation; localization; radiation defects; surface-oriented mass transport; Annealing; Atomic layer deposition; Atomic measurements; Impurities; Lattices; Nitrogen; Optical reflection; Silicon; Temperature; X-ray diffraction;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586496
