DocumentCode
3485281
Title
Reliable 3D damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/μm2
Author
Thomas, M. ; Farcy, A. ; Perrot, C. ; Deloffre, E. ; Gros-Jean, M. ; Benoit, D. ; Richard, C. ; Caubet, P. ; Guillaumet, S. ; Pantel, R. ; Cordeau, M. ; Piquet, J. ; Bermond, C. ; Fléchet, B. ; Chenevier, B. ; Torres, J.
Author_Institution
STMicroelectronics, Crolles
fYear
2007
fDate
12-14 June 2007
Firstpage
58
Lastpage
59
Abstract
A new simple 3D Damascene architecture requiring only one additional mask is introduced for high-density MIM capacitors. TiN/Ta2O5/TiN stack deposited by PEALD has been integrated between Cu interconnect levels to maximize quality factor Q, reaching up to 17 fF/μm2 capacitance. High-performance, breakdown voltages over 15 V and good linearity, C1 = 76 ppm/V and C2 = 63 ppm/V2 at 100 kHz, make this capacitor an unique solution for analog and RF applications embedded in Cu BEOL.
Keywords
MIM devices; copper; interconnections; semiconductor device metallisation; tantalum compounds; thin film capacitors; titanium compounds; 3D damascene MIM architecture; Cu; RF application; Ta2O5; TiN; analog application; capacitor record density; copper interconnect; frequency 100 kHz; high-density MIM capacitors; Capacitance; Degradation; Dielectrics; Electrodes; Integrated circuit interconnections; Leakage current; Linearity; MIM capacitors; Radio frequency; Tin; Cu interconnect; Damascene architecture; MIM capacitor; RF and analog applications;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2007 IEEE Symposium on
Conference_Location
Kyoto
Print_ISBN
978-4-900784-03-1
Type
conf
DOI
10.1109/VLSIT.2007.4339726
Filename
4339726
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