Title :
Reliable 3D damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/μm2
Author :
Thomas, M. ; Farcy, A. ; Perrot, C. ; Deloffre, E. ; Gros-Jean, M. ; Benoit, D. ; Richard, C. ; Caubet, P. ; Guillaumet, S. ; Pantel, R. ; Cordeau, M. ; Piquet, J. ; Bermond, C. ; Fléchet, B. ; Chenevier, B. ; Torres, J.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
A new simple 3D Damascene architecture requiring only one additional mask is introduced for high-density MIM capacitors. TiN/Ta2O5/TiN stack deposited by PEALD has been integrated between Cu interconnect levels to maximize quality factor Q, reaching up to 17 fF/μm2 capacitance. High-performance, breakdown voltages over 15 V and good linearity, C1 = 76 ppm/V and C2 = 63 ppm/V2 at 100 kHz, make this capacitor an unique solution for analog and RF applications embedded in Cu BEOL.
Keywords :
MIM devices; copper; interconnections; semiconductor device metallisation; tantalum compounds; thin film capacitors; titanium compounds; 3D damascene MIM architecture; Cu; RF application; Ta2O5; TiN; analog application; capacitor record density; copper interconnect; frequency 100 kHz; high-density MIM capacitors; Capacitance; Degradation; Dielectrics; Electrodes; Integrated circuit interconnections; Leakage current; Linearity; MIM capacitors; Radio frequency; Tin; Cu interconnect; Damascene architecture; MIM capacitor; RF and analog applications;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339726
