Local dielectric layers formation in Si and SiGe using focused ion beam implantation

25 kev Ga⁺ focused ion beam implantation of various structures has been used to provide local dielectric isolation of devices. Stain etching in HF:H₂O solution following the implantation step transforms the implanted areas in a porous state. Low thermal budget oxidation of the treated samples results in selective oxidation of these areas. Electrical measurements made on the test transistors structures reveal high resistive region in between the single transistors. SIMS, TEM and optical measurements were used to describe phenomena observed