• DocumentCode
    3485297
  • Title

    Efficient statistical BJT modeling, why β is more than Ic /Ib

  • Author

    McAndrew, Colin C. ; Bates, John ; Ida, Richard T. ; Drennan, Patrick

  • Author_Institution
    Motorola Inc., Tempe, AZ, USA
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    28
  • Lastpage
    31
  • Abstract
    This paper presents a new, efficient, accurate method for statistical BJT modeling, using backward propagation of variance (BPV). The method uses process control (PC) data to infer variations in process parameters, including geometry variations, and takes only minutes to run on an engineering workstation
  • Keywords
    bipolar transistors; process control; semiconductor device models; backward propagation of variance; collector current base current ratio; current gain; engineering workstation; process control; statistical BJT model; Circuit optimization; Circuit simulation; Data engineering; Doping; Geometry; Integrated circuit modeling; Monte Carlo methods; Process control; SPICE; Semiconductor device modeling; Solid modeling; Virtual manufacturing; Workstations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647349
  • Filename
    647349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485297