Title :
Efficient statistical BJT modeling, why β is more than Ic /Ib
Author :
McAndrew, Colin C. ; Bates, John ; Ida, Richard T. ; Drennan, Patrick
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
This paper presents a new, efficient, accurate method for statistical BJT modeling, using backward propagation of variance (BPV). The method uses process control (PC) data to infer variations in process parameters, including geometry variations, and takes only minutes to run on an engineering workstation
Keywords :
bipolar transistors; process control; semiconductor device models; backward propagation of variance; collector current base current ratio; current gain; engineering workstation; process control; statistical BJT model; Circuit optimization; Circuit simulation; Data engineering; Doping; Geometry; Integrated circuit modeling; Monte Carlo methods; Process control; SPICE; Semiconductor device modeling; Solid modeling; Virtual manufacturing; Workstations;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647349
