Title :
BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design
Author :
Dunga, Mohan V. ; Lin, Chung-Hsun ; Lu, Darsen D. ; Xiong, Weize ; Cleavelin, C.R. ; Patruno, P. ; Hwang, Jiunn-Ren ; Yang, Fu-Liang ; Niknejad, Ali M. ; Hu, Chenming
Author_Institution :
California Univ., Berkeley
Abstract :
A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are co-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.
Keywords :
integrated circuit modelling; mixed analogue-digital integrated circuits; surface potential; BSIM MG; TCAD; electrical behavior; field penetration length model; finite body doping; mixed signal design; poly depletion effect; quantum mechanical effect; short channel effects; surface potential; versatile multi gate FET model; Capacitance-voltage characteristics; Computer aided manufacturing; Doping; FETs; FinFETs; Leakage current; Predictive models; Scalability; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339727
