BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design

Author

Dunga, Mohan V. ; Lin, Chung-Hsun ; Lu, Darsen D. ; Xiong, Weize ; Cleavelin, C.R. ; Patruno, P. ; Hwang, Jiunn-Ren ; Yang, Fu-Liang ; Niknejad, Ali M. ; Hu, Chenming

Author_Institution

California Univ., Berkeley

fYear

2007

fDate

12-14 June 2007

Firstpage

60

Lastpage

61

Abstract

A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are co-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.

Keywords

integrated circuit modelling; mixed analogue-digital integrated circuits; surface potential; BSIM MG; TCAD; electrical behavior; field penetration length model; finite body doping; mixed signal design; poly depletion effect; quantum mechanical effect; short channel effects; surface potential; versatile multi gate FET model; Capacitance-voltage characteristics; Computer aided manufacturing; Doping; FETs; FinFETs; Leakage current; Predictive models; Scalability; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339727

Filename

4339727