• DocumentCode
    348533
  • Title

    Suppression of lateral transient enhanced dopant diffusion by nitrogen implantation and its application to fully depleted MOSFETs/SIMOX

  • Author

    Nakashima, S. ; Takahashi, M. ; Nakayama, S. ; Ohno, T.

  • Author_Institution
    NTT Syst. Electron. Lab., Atsugi, Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    122
  • Abstract
    This paper confirms that nitrogen ion implantation is effective in suppressing the lateral transient enhanced diffusion (TED) of implanted impurity dopants during annealing and that the suppressed TED for highly doped source and drain regions provides the MOSFET/SIMOX with a controlled effective channel length
  • Keywords
    MOSFET; SIMOX; annealing; diffusion barriers; elemental semiconductors; ion implantation; nitrogen; semiconductor doping; silicon; Si:N; annealing; controlled effective channel length; drain; fully depleted MOSFET/SIMOX; highly doped source; implanted impurity dopants; lateral transient enhanced dopant diffusion; nitrogen implantation; Boron; Impurities; Ion implantation; Laboratories; Leakage current; MOSFET circuits; Nitrogen; P-n junctions; Rapid thermal annealing; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812067
  • Filename
    812067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=348533