The ULE2 ion source capabilities important to SOI technology

Author

Graf, Michael A. ; Krull, Wade ; Benveniste, Victor

Author_Institution

Eaton Corp., Beverly, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

308

Abstract

The RF-driven ion source used in the ULE2 ion implanter has unique capabilities for producing high current beams of species important to silicon-on-insulator technology. Specifically, results are presented that demonstrate the capabilities of this ion source for producing beams of H⁺ and O⁺, important to SmartCut^TM and SIMOX technologies. Beam currents and atomic and molecular ion species distributions are presented as functions of source input power, feed gas flow rate, and source geometry over a wide range of operating parameters. Predictions taken from a volume-averaged model of the ion source plasma show good agreement with experimental results. In each case it is clear that delivered beam current can increase at least linearly with input power, and that significant improvements in performance are readily available using the existing ULE2 ion source

Keywords

SIMOX; ion implantation; ion sources; plasma diagnostics; semiconductor doping; silicon-on-insulator; H; H⁺; O; O⁺; RF-driven ion source; SIMOX; SOI technology; Si; SmartCut; ULE2 ion source capabilities; atomic ion species distributions; beam current; beam currents; feed gas flow rate; high current beams; input power; ion source plasma; molecular ion species distributions; operating parameters; performance; silicon-on-insulator technology; source geometry; source input power; volume-averaged model; Atomic beams; Feeds; Fluid flow; Geometry; Ion sources; Molecular beam applications; Molecular beams; Plasma sources; Predictive models; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812114

Filename

812114