Impurity gettering in damaged regions of Si produced by high energy ion implantation

Author

Koegler, R. ; Panknin, D. ; Skorupa, W. ; Werner, P. ; Danilin, A.

Author_Institution

Forschungszentrum Rossendorf, Dresden, Germany

fYear

1996

fDate

16-21 Jun 1996

Firstpage

679

Lastpage

681

Abstract

“Point”-defects and defect agglomerates are created by high energy ion implantation into Si and subsequent annealing. These defects are investigated by gettering of metal atoms and analysing the metal distribution. Beside a gettering layer at the projected ion range (R_p) where most of the implanted atoms are located another gettering layer is also found at the R_p/2-position. This R _p/2-layer is related to implantation defects-not to the implant atoms. It is thermally stable up to a temperature of more than 1000°C

Keywords

annealing; elemental semiconductors; getters; impurity distribution; impurity-defect interactions; ion implantation; point defects; rapid thermal annealing; secondary ion mass spectra; silicon; transmission electron microscopy; 1 hour; 2 MeV; 30 s; 700 to 1150 C; R_p/2-position; RTA; SIMS; Si; Si:Cu; Si:Fe; TEM; damaged regions; defect agglomerates; furnace annealing; high energy ion implantation; implantation defects; impurity gettering; metal atom gettering; metal distribution; point defects; projected ion range; thermal stability; Atomic layer deposition; Gettering; Implants; Impurities; Inorganic materials; Ion implantation; Iron; Purification; Rapid thermal annealing; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586502

Filename

586502