Title :
Impurity gettering in damaged regions of Si produced by high energy ion implantation
Author :
Koegler, R. ; Panknin, D. ; Skorupa, W. ; Werner, P. ; Danilin, A.
Author_Institution :
Forschungszentrum Rossendorf, Dresden, Germany
Abstract :
“Point”-defects and defect agglomerates are created by high energy ion implantation into Si and subsequent annealing. These defects are investigated by gettering of metal atoms and analysing the metal distribution. Beside a gettering layer at the projected ion range (Rp) where most of the implanted atoms are located another gettering layer is also found at the Rp/2-position. This R p/2-layer is related to implantation defects-not to the implant atoms. It is thermally stable up to a temperature of more than 1000°C
Keywords :
annealing; elemental semiconductors; getters; impurity distribution; impurity-defect interactions; ion implantation; point defects; rapid thermal annealing; secondary ion mass spectra; silicon; transmission electron microscopy; 1 hour; 2 MeV; 30 s; 700 to 1150 C; Rp/2-position; RTA; SIMS; Si; Si:Cu; Si:Fe; TEM; damaged regions; defect agglomerates; furnace annealing; high energy ion implantation; implantation defects; impurity gettering; metal atom gettering; metal distribution; point defects; projected ion range; thermal stability; Atomic layer deposition; Gettering; Implants; Impurities; Inorganic materials; Ion implantation; Iron; Purification; Rapid thermal annealing; Temperature;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586502
