Silicon ion beam epitaxy

Author

Rabalais, J.W. ; Bayati, Al ; Boyd, K.J. ; Marton, D. ; Kulik, J. ; Zhang, Z. ; Chu, W.K.

Author_Institution

Dept. of Chem., Houston Univ., TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

682

Lastpage

685

Abstract

Direct ion beam deposition of ²⁸Si⁺ ions for homoepitaxial film growth on Si{100} bas been. Studied over the ion energy range 8-80 eV in the low temperature range of 40-500°C. Deposition was performed by means of a mass-selected, UHV ion beam system with a well-defined energy for which the energy spread is ΔE=±3 eV. The films were analyzed in situ at growth intervals by RHEED and AES and ex situ by TEM, RBS, and SIMS. The growth mode, crystalline quality, and number of defects are found to be extremely sensitive to both substrate temperature and ion energy. An optimum ion energy window for achieving layer-by-layer growth and high crystalline quality films is observed. This behavior is discussed in terms of the changes in the phenomena which dominate the growth process as a function of ion energy and temperature

Keywords

Auger effect; Rutherford backscattering; elemental semiconductors; ion beam applications; reflection high energy electron diffraction; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscopy; vacuum deposition; vapour phase epitaxial growth; 40 to 500 C; 8 to 80 eV; ²⁸Si⁺ ions; AES; RBS; RHEED; SIMS; Si; Si{100}; TEM; crystalline quality; defects; direct ion beam deposition; ex situ analysis; growth mode; homoepitaxial film growth; in situ analysis; ion beam epitaxy; ion energy range; layer-by-layer growth; low temperature range; mass-selected UHV ion beam system; optimum ion energy window; substrate temperature; Atomic layer deposition; Atomic measurements; Crystallization; Epitaxial growth; Identity-based encryption; Ion beams; Semiconductor films; Silicon; Substrates; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586505

Filename

586505