• DocumentCode
    348541
  • Title

    Applied Materials xR80S, xRLEAP and xR120S 300 mm Ion Implant Systems

  • Author

    Edwards, Peter ; Banks, Peter ; Beeston, Brian ; Cooke, Richard ; David, Andrew ; Naylor-Smith, Richard ; Paffett, Geoffrey ; Boyd, Wendell ; Wagner, Dennis

  • Author_Institution
    Implant Div., Appl. Mater., Horsham, UK
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    362
  • Abstract
    This paper introduces the Applied Materials xR80S, xRLEAP and xR120S 300 mm Batch High Current Ion Implanter. This tool provides a low risk extension to 300 mm with maximum process transparency by sharing a common beamline family with the existing 200 mm products. The small footprint concept of the 200 mm systems has been retained. High productivity is achieved especially for shallow junction formation where the combined superiority of a batch system with the Applied Materials LEAP technology gives greatest advantage
  • Keywords
    ion implantation; semiconductor doping; 300 mm Batch High Current Ion Implanter; Applied Materials LEAP technology; Ion Implant Systems; beamline family; high productivity; maximum process transparency; shallow junction formation; small footprint concept; wafer manufacture; xR120S; xR80S; xRLEAP; Dosimetry; Hardware; Implants; Manufacturing automation; Plasma materials processing; Power generation economics; Production facilities; Productivity; Robots; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812128
  • Filename
    812128