DocumentCode :
3485425
Title :
Re-examination of Flat-Band Voltage Shift for High-k MOS Devices
Author :
Iwamoto, Ken ; Ito, H. ; Kamimuta, Y. ; Watanabe, Yoshihiro ; Mizubayashi, W. ; Migita, S. ; Morita, Yusuke ; Takahashi, Masaharu ; Ota, Hiroyuki ; Nabatame, T. ; Toriumi, A.
Author_Institution :
MIRAI-ASELAISTT, Tsukuba
fYear :
2007
fDate :
12-14 June 2007
Firstpage :
70
Lastpage :
71
Abstract :
We have systematically investigated the VFB shift in the case of the stacked bi-layer high-k dielectrics with paying attention to the high-k/IL-SiO2 interface. We demonstrate for the first time that VFB shifts are determined predominantly by the high-k/IL-SiO2 interface, while the gate/high-k interface plays little role.
Keywords :
MIS devices; dielectric materials; silicon compounds; SiO2; bi-layer high-k dielectrics; flat-band voltage shift; high-k MOS devices; Aluminum oxide; Capacitance-voltage characteristics; Channel bank filters; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS capacitors; MOS devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
Type :
conf
DOI :
10.1109/VLSIT.2007.4339731
Filename :
4339731
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3485425
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