Title :
Characterisation of epitaxial Graphene structures
Author :
Novikov, S. ; Satrapinski, A. ; Lebedeva, N.
Author_Institution :
Dept. of micro & Nanosci., Aalto Univ., Espoo, Finland
Abstract :
Epitaxial Graphene layers were grown on SiC substrate in ultra-high vacuum chamber and in Ar filled furnace. Measurement of the Hall resistance in the magnetic fields up to 11 T and at the temperatures down to 1.4 K presently show some fine features and minimums in magnetic field dependence, suggesting the visibility of observation of quantization effects after further optimization of technology of fabricationis.
Keywords :
epitaxial layers; fullerene devices; graphene; quantum Hall effect; solid phase epitaxial growth; Ar filled furnace; C; Hall resistance; SiC; epitaxial graphene structure; quantization effects; ultrahigh vacuum chamber; Argon; Electrical resistance measurement; Furnaces; Magnetic field measurement; Quantization; Silicon carbide; Substrates; Temperature dependence;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544742
