DocumentCode :
3485438
Title :
VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si
Author :
Akiyama, K. ; Wang, W. ; Mizubayashi, W. ; Ikeda, M. ; Ota, H. ; Nabatame, T. ; Toriumi, A.
Author_Institution :
MIRAI-ASET, Tsukuba
fYear :
2007
fDate :
12-14 June 2007
Firstpage :
72
Lastpage :
73
Abstract :
We report for the first time that VFB roll-off behavior observed in thinner EOT region for metal/HfO2/SiO2 stacks is directly related to re-oxidation at the bottom SiO2/Si interface. Based on this understanding, we propose a possible solution for keeping high effective work-function (Phim,eff ) without VFB roll-off and demonstrate the obtained Phim,eff value of 4.9 eV mPt3Si/HfO2/SiO2 stack.
Keywords :
MOSFET; annealing; hafnium compounds; oxidation; silicon compounds; HfO2-SiO2; SiO2-Si; gate stack; high temperature annealing process; out-diffused oxygen; reoxidation; roll-off behavior; thinner EOT region; work-function; Annealing; Channel bank filters; Electrodes; Hafnium oxide; Hydrogen; Oxidation; Scalability; Silicon compounds; Temperature; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
Type :
conf
DOI :
10.1109/VLSIT.2007.4339732
Filename :
4339732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3485438
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