DocumentCode :
348544
Title :
Advanced implantation systems and development of general purpose unlimited lifetime ECRIS for application on implantation devices
Author :
Bieth, C. ; Bouly, J.L. ; Curdy, J.C. ; Kantas, S. ; Sortais, P. ; Sole, P. ; Vieux-Rochaz, J.L.
Author_Institution :
Pantech. SA, Caen, France
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
400
Abstract :
ECR ion sources were originally developed for high energy physics applications. They are used as injectors on linear accelerators and cyclotrons to further elevate the particle energy via high charge state ions. This technique is well suited for sources placed on a high voltage platform where AC power available is limited by isolated transformers. The PANTECHNIKs family of ion sources with its wide range of ion beams (various charge states with various beam currents) offers new possibilities and perspectives in the field of ion implantation. In addition to all these possibilities, PANTECHNIK ion sources have many other advantages like: a very long life time without maintenance expense, good stability, efficiency of ionisation close to 100% (this improves the life time of the pumping system and other equipment), the possibility to produce ion beams with different energies and a very good reproducibility
Keywords :
ion implantation; ion sources; semiconductor device manufacture; semiconductor doping; AC power available; ECR ion sources; PANTECHNIK; advanced implantation systems; cyclotrons; general purpose unlimited lifetime ECRIS; good stability; high charge state ions; high voltage platform; implantation devices; injectors; ionisation efficiency; isolated transformers; linear accelerators; particle energy; very good reproducibility; very long life time without maintenance expense; Coaxial components; Energy consumption; Ion beams; Ion sources; Permanent magnets; Plasma immersion ion implantation; Plasma sources; Plasma waves; Production systems; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812138
Filename :
812138
Link To Document :
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