DocumentCode :
348545
Title :
Using transfer matrix to analyze the dosimetry of ion implanters
Author :
Huang, Yongzhang
Author_Institution :
Sumitomo Eaton Nova Corp., Toyo, Japan
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
440
Abstract :
Parallelism and uniformity are the two basic requirements of the modern medium current ion implanters. These two are usually called dosimetry. We have developed, for the first time, an analytical tool for the dosimetry study. Borrowed from a concept in accelerator physics, the transfer matrix has been used for these studies. Because of the large non-linearity in the fields of the devices, the standard method of the transfer matrix has been modified for our purpose. Some simplifications are also necessary. This paper applies this new method to the Eaton NV-8250 ion implanter. The analytical results show that it not only helps us to understand the correlation between dosimetry and hardware, but also provides a scaling law to guide the future performance improvement. We believe that this analytical tool can be applied to other implanters
Keywords :
dosimetry; ion implantation; Eaton NV-8250 implanter; dosimetry; ion implanters; scaling law; scan-parallel system; transfer matrix; Dosimetry; Hardware; Ion accelerators; Ion beams; Lenses; Modems; Optical beams; Particle beams; Performance analysis; Physics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812148
Filename :
812148
Link To Document :
بازگشت