Title :
Monitoring low dose implants with advanced ThermaWave and capacitance-voltage
Author :
Curello, G. ; Gallacher, B. ; Carroll, D. ; Carsch, R. ; Graves, P. ; Chen, L. ; Kandler, E. ; Herlocher, R.H.Y.
Author_Institution :
Siemens Microelectron., Newcastle-upon-Tyne, UK
Abstract :
In this work a performance evaluation of some of the most recently improved instruments for low implant dose measurement based on Therma-Wave and Capacitance-Voltage techniques has been carried out. Dose sensitivity and repeatability has been investigated on a TW-TP420, TW-TP500, CV SSM5100, and a R&D Therma-Probe system. Results indicate that both types of tool have improved significantly in terms of repeatability due to the introduction of a solid state laser and of Hg probes in the TW and CV tool respectively. This in turn results in lower dose detectability required to tightly control threshold voltages in current DRAM technologies
Keywords :
ion implantation; semiconductor device manufacture; semiconductor doping; DRAM technologies; Hg probes; advanced ThermaWave technique; capacitance-voltage measurements; dose sensitivity; monitoring low dose implants; repeatability; solid state laser; threshold voltages; Capacitance measurement; Capacitance-voltage characteristics; Implants; Instruments; Mercury (metals); Monitoring; Probes; Solid lasers; Threshold voltage; Voltage control;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812174
