Title :
Properties of shunt-protected tunneling devices for the Electron Counting Capacitance Standard (ECCS) experiment at PTB
Author :
Camarota, Benedetta ; Lotkhov, Sergey V. ; Scherer, Hansjoerg ; Weimann, Thomas ; Hinze, Peter ; Zorin, Alexander
Author_Institution :
Phys.-Tech. Bundesanstalt (PTB), Braunschweig, Germany
Abstract :
We report on the progress in the Electron-Counting-Capacitance-Standard (ECCS) experiment. In particular, we address electrostatic breakdown in metallic single-electron tunneling (SET) structures fabricated on high-quality insulating substrates, An approach was developed via on-chip silicon shunts protecting the high-ohmic nanoscale tunnel junctions against damage.
Keywords :
capacitance; counting circuits; electric breakdown; single electron devices; substrates; tunnelling; ECCS experiment; PTB; electron counting capacitance standard experiment; electrostatic breakdown; high-ohmic nanoscale tunnel junctions; high-quality insulating substrates; metallic SET structures; metallic single electron tunneling structures; on-chip silicon shunts; shunt protected tunneling devices properties; Circuits; Electric breakdown; Electrons; Error correction codes; Fabrication; Quantum capacitance; Substrates; Switches; Tunneling; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544744
