Properties of shunt-protected tunneling devices for the Electron Counting Capacitance Standard (ECCS) experiment at PTB

Author

Camarota, Benedetta ; Lotkhov, Sergey V. ; Scherer, Hansjoerg ; Weimann, Thomas ; Hinze, Peter ; Zorin, Alexander

Author_Institution

Phys.-Tech. Bundesanstalt (PTB), Braunschweig, Germany

fYear

2010

fDate

13-18 June 2010

Firstpage

291

Lastpage

292

Abstract

We report on the progress in the Electron-Counting-Capacitance-Standard (ECCS) experiment. In particular, we address electrostatic breakdown in metallic single-electron tunneling (SET) structures fabricated on high-quality insulating substrates, An approach was developed via on-chip silicon shunts protecting the high-ohmic nanoscale tunnel junctions against damage.

Keywords

capacitance; counting circuits; electric breakdown; single electron devices; substrates; tunnelling; ECCS experiment; PTB; electron counting capacitance standard experiment; electrostatic breakdown; high-ohmic nanoscale tunnel junctions; high-quality insulating substrates; metallic SET structures; metallic single electron tunneling structures; on-chip silicon shunts; shunt protected tunneling devices properties; Circuits; Electric breakdown; Electrons; Error correction codes; Fabrication; Quantum capacitance; Substrates; Switches; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2010 Conference on

Conference_Location

Daejeon

Print_ISBN

978-1-4244-6795-2

Type

conf

DOI

10.1109/CPEM.2010.5544744

Filename

5544744