Title :
A scalable, statistical SPICE Gummel-Poon model for SiGe HBTs
Author :
Walter, K.M. ; Ebersman, B. ; Sunderland, D.A. ; Berg, G.D. ; Freeman, G.G. ; Groves, R.A. ; Jadus, D.K. ; Harame, D.L.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
Abstract :
A scaleable, statistical model has been developed for SiGe HBTs. SPICE Gummel-Poon model parameters are scaled, and statistics added, using language features built into HSPICE. DC and AC fit is good over a wide range in emitter sizes. Features of IBM´s HBT technology which make scaling work are discussed
Keywords :
Ge-Si alloys; HSPICE; SiGe; SiGe HBT; scaling; statistical SPICE Gummel-Poon model; Bipolar transistors; Circuit simulation; Electronic mail; Equations; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; SPICE; Silicon germanium; Statistics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647350
