Title :
Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation
Author :
Zhu, Jane G. ; White, C.W. ; Budai, J.D. ; Withrow, S.P. ; Henderson, D.O.
Author_Institution :
Div. of Solid State, Oak Ridge Nat. Lab., TN, USA
Abstract :
Nanocrystals of SiGe alloy have been formed inside a SiO2 matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion-beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions
Keywords :
Ge-Si alloys; annealing; ion beam mixing; ion implantation; nanostructured materials; semiconductor materials; SiGe; SiGe nanocrystal; SiO2; SiO2 matrix; annealing; ion beam mixing; ion implantation; Annealing; Germanium silicon alloys; III-V semiconductor materials; Ion beams; Ion implantation; Laboratories; Nanocrystals; Silicon germanium; Size control; Temperature;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586508
