Title :
High Speed and Highly Cost effective 72M bit density S3 SRAM Technology with Doubly Stacked Si Layers, Peripheral only CoSix layers and Tungsten Shunt W/L Scheme for Standalone and Embedded Memory
Author :
Jung, Soon-Moon ; Lim, Hoon ; Yeo, Chadong ; Kwak, Kunho ; Son, Byoungkeun ; Park, Hanbyung ; Jonghoon Na ; Shim, Jae-Joo ; Hong, Changmin ; Kim, Kinam
Author_Institution :
Samsung Electron., Yongin
Abstract :
Highly cost effective and high speed 72M bit density S3 SRAM technology was successfully achieved for standalone memory and embedded memory with selective epitaxial growth of Si films, low thermal SSTFT process , periphery only Co salicidation, and W shunt wordline scheme.
Keywords :
SRAM chips; embedded systems; CoSi; SRAM technology; W; bit density; embedded memory; peripheral only CoSix layers; salicidation; selective epitaxial growth; shunt wordline scheme; standalone memory; static random access memory; tungsten shunt; CMOS technology; Costs; Lithography; Logic devices; MOS devices; Oxidation; Plasma temperature; Random access memory; Semiconductor films; Tungsten;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339736
