Title :
Characterization of a high current ultra low energy ion implanter
Author :
Ranganathan, Rekha ; Krull, Wade ; Sundstrom, Hans ; Mack, Mike ; Sedgewick, Judy ; Eddy, Ron
Author_Institution :
Eaton Corp., Beverly, MA, USA
Abstract :
The process performance of a high current ultra low energy machine over a wide range of energies (200 eV to 30 keV) and high beam currents is characterized. Designed to meet the production needs of 0.18 μm ultra shallow junction implants, the ultra low energy (ULE2) high current low energy ion implanter delivers high currents and unmatched throughput. Critical process parameters such as uniformity, repeatability, particle performance and aluminum contamination are characterized. Data from characterization studies are presented and challenges unique to the ULE2 implanter are discussed
Keywords :
ion implantation; ion sources; semiconductor junctions; surface contamination; 200 eV to 30 keV; aluminum contamination; beam current; high current ultra low energy ion implanter; process performance; repeatability; ultra shallow junction implants; uniformity; Aluminum; Annealing; Boron; Contamination; Electrical resistance measurement; Implants; Pollution measurement; Production; Radio frequency; Throughput;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812192
