Comparison of implant charging results obtained with QUANTOX(R) and CHARM(R)-2

Author

Daryanami, S. ; Shields, Jeff

Author_Institution

Microchip Technol., Tempe, AZ, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

662

Abstract

A comparison of charging results obtained with Quantox(R) and CHARM(R)-2 is presented for the case of arsenic implants at 80 KeV and 20 KeV, performed at doses of 5e14/cm² and 5e15/cm² at beam currents of 9 mA and 18 mA. The surface potential maps obtained by the Quantox are compared to the potentials and currents measured on the CHARM sensors, with the plasma charge control system ON and OFF. The sensitivity of the Quantox surface potential technique is compared for changes in the oxide thickness, the dose, and the beam density

Keywords

arsenic; elemental semiconductors; ion implantation; plasma materials processing; semiconductor doping; silicon; surface charging; surface potential; 18 mA; 20 keV; 80 keV; 9 mA; CHARM sensors; CHARM-2; QUANTOX; Si:As; arsenic implants; beam currents; beam density; doses; implant charging; oxide thickness; plasma charge control system; surface potential maps; Antenna measurements; Charge measurement; Current measurement; Implants; Integrated circuit measurements; Plasma density; Plasma measurements; Sensor phenomena and characterization; Surface charging; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812203

Filename

812203