Title :
Design of bipolar RF ring oscillators
Author :
Finocchiaro, S. ; Palmisano, G. ; Salerno, R. ; Sclafani, C.
Author_Institution :
Facolta di Ingegneria, Catania Univ., Italy
Abstract :
This paper deals with RF ring oscillators in bipolar technology. Using a simplified approach based on a linear model, accurate design equations are provided for the main performance parameters such as the oscillation frequency, the oscillation amplitude, the quality factor, and the phase noise. Design considerations are also given which focus well tuning range and its relation with gain and oscillation amplitude, taking as a design example the most widely used gain stage. The proposed analysis is validated by the design of two and four-stage ring oscillators at 1.8 GHz using a high performance 18-GHz bipolar process. Simulations with the software CAD SpectreRF show an excellent agreement with the expected results
Keywords :
Q-factor; UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; integrated circuit design; integrated circuit noise; phase noise; radiofrequency oscillators; 1.8 GHz; 18 GHz; RFIC; SpectreRF; bipolar RF ring oscillators; design equations; four-stage ring oscillators; linear model; oscillation amplitude; oscillation frequency; phase noise; quality factor; tuning range; two-stage ring oscillators; Circuits; Equations; Inductors; Phase locked loops; Phase noise; Q factor; Radio frequency; Ring oscillators; Silicon; Tuning;
Conference_Titel :
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location :
Pafos
Print_ISBN :
0-7803-5682-9
DOI :
10.1109/ICECS.1999.812210
