Novel Heat Dissipating Cell Scheme for Improving a Reset Distribution in a 512M Phase-change Random Access Memory (PRAM)

Author

Kang, D.H. ; Kim, Jong Soo ; Kim, Y.R. ; Kim, Y.T. ; Lee, M.K. ; Jun, Y.J. ; Park, Jae Hyo ; Yeung, Frankie ; Jeong, C.W. ; Yu, Jinpeng ; Kong, J.H. ; Ha, D.W. ; Song, S.A. ; Park, Jongho ; Park, Yu-Seop ; Song, Young Jun ; Eum, C.Y. ; Ryoo, K.C. ; Shin,

Author_Institution

CAE, Yongin

fYear

2007

fDate

12-14 June 2007

Firstpage

96

Lastpage

97

Abstract

Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge₂Sb₂Te₅ and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.

Keywords

amorphous semiconductors; antimony compounds; crystallisation; germanium compounds; phase change materials; random-access storage; ternary semiconductors; heat dissipating cell scheme; heat dissipating layer; partial crystallization; phase-change random access memory; Amorphous materials; Cooling; Crystallization; Degradation; Phase change materials; Phase change random access memory; Resistance heating; Switches; Temperature; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339741

Filename

4339741