Electrical characterisation of magnesium and tellurium implanted indium gallium arsenide

There has been a great deal of interest in the Indium Gallium Arsenide (InGaAs) material system, both lattice matched to Indium Phosphide (InP) as well as material grown pseudomorphically on GaAs because of its importance to optoelectronic devices. In this paper we present some preliminary observations on the electrical properties of In _xGa_1-xAs on Gallium Arsenide (GaAs) substrate implanted with magnesium with x varying between 0 to 60 atomic %. Our results indicate that p-type activity is difficult to realise in In_xGa_1-xAs for x>50%. We also report results of tellurium doubly charged implanted into In_0.53Ga_0.47 As lattice matched to InP. About 600 angstroms of rf sputtered Aluminium Nitride (AlN) encapsulant was used to carry out 30s isochronal anneals in an optical furnace at temperatures of 600, 700 and 800°C. Differential Hall effect measurements were performed to provide dopant depth profiles. Good dopant activation and mobilities were obtained