Novel Lithography-Independent Pore Phase Change Memory

Author

Breitwisch, M. ; Nirschl, T. ; Chen, C.F. ; Zhu, Y. ; Lee, M.H. ; Lamorey, M. ; Burr, G.W. ; Joseph, E. ; Schrott, A. ; Philipp, J.B. ; Cheek, R. ; Happ, T.D. ; Chen, S.-H. ; Zaidi, S. ; Flaitz, P. ; Bruley, J. ; Dasaka, R. ; Rajendran, B. ; Rossnagel, S.

Author_Institution

IBM T.J. Watson Res. Center, Yorktown Heights

fYear

2007

fDate

12-14 June 2007

Firstpage

100

Lastpage

101

Abstract

We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformal deposition. Fully integrated 256 kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80 ns, RESET currents less than 250 muA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically -defined diameter.

Keywords

CMOS memory circuits; lithography; random-access storage; CMOS technology; PCRAM; RESET currents; conformal deposition; critical dimension; lithography-independent memory; pore phase change memory; size 180 nm; sub-lithographic CD; CMOS technology; Lithography; Lungs; Nonvolatile memory; Phase change memory; Phase change random access memory; Phased arrays; Temperature; Testing; Threshold voltage; NV memory; PCRAM; chalcogenide; pore;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339743

Filename

4339743