A Si-based Al/AlN/Si mis device and its photo responsivity

We present the fabrication of a silicone based metal-insulator-semiconductor (MIS) device using aluminum nitride (AlN) as the dielectric layer and its characteristics of photo-responsivity. Pulse laser deposition was used to deposit AlN dielectric layer with good surface morphology and interface properties. Current v.s. voltage (I-V) measurements was used to characterize the electro-optic properties of the MIS devices fabricated. A photo-responsivity of 0.75 A/W at 750 nm was achieved of a MIS device with a 9.8 nm thick AlN dielectric layer. In addition, measurements of photo sensitivity of MIS devices with various thickness of the AlN dielectric layer had been performed. It was found that the thinner the AlN dielectric layer of the MIS device the higher the photo-current would be, and the stability of the photo-current of the MIS devices could be effectively improved by thermal annealing the AlN dielectric layer at 600°C.