Title :
High performance BiCMOS process integration: trends, issues, and future directions
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
This work will review trends for high performance BiCMOS technology. A section comparing CMOS and Bipolar for RF attempts to forecast the future need for BiCMOS. This is followed by the status on Bipolar scaling trends and directions. A detailed section on BiCMOS process integration from starting substrate to final metal comprises the bulk of the paper. Key figures-of-merit for several BiCMOS processes in a variety of different application areas are summarized
Keywords :
BiCMOS integrated circuits; integrated circuit technology; technological forecasting; BiCMOS process integration; CMOS technology; RF circuits; bipolar device scaling; figure of merit; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Germanium silicon alloys; Hardware design languages; Logic design; Process design; Radio frequency; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-3916-9
DOI :
10.1109/BIPOL.1997.647351
