DocumentCode :
348573
Title :
Analysis of nonlinearities in RF CMOS amplifiers
Author :
Feng, Chien-Hsiung ; Jonsson, Fredrik ; Ismail, Mohammed ; Olsson, Hakan
Author_Institution :
Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
137
Abstract :
The analysis of nonlinearities in RF CMOS circuits is performed. Equations describing nonlinear behaviour of source degenerated common-source transconductance stages, differential-pairs, common-gate and cascode amplifier stages are derived. A comparison between capacitive, resistive and inductive degeneration is performed. Emphasis is given on the effect of design parameters such as transistor width and DC-bias currents on the performance
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; differential amplifiers; integrated circuit design; DC-bias currents; RF CMOS amplifiers; cascode amplifier stages; common-gate amplifier stages; design parameters; differential-pairs; inductive degeneration; nonlinear behaviour; nonlinearities; source degenerated common-source transconductance stages; transistor width; Circuits; Design methodology; Differential equations; Impedance matching; Linearity; MOSFETs; Radio frequency; Radiofrequency amplifiers; Transconductance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location :
Pafos
Print_ISBN :
0-7803-5682-9
Type :
conf
DOI :
10.1109/ICECS.1999.812242
Filename :
812242
Link To Document :
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