Analysis of nonlinearities in RF CMOS amplifiers

Author

Feng, Chien-Hsiung ; Jonsson, Fredrik ; Ismail, Mohammed ; Olsson, Hakan

Author_Institution

Analog VLSI Lab., Ohio State Univ., Columbus, OH, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

137

Abstract

The analysis of nonlinearities in RF CMOS circuits is performed. Equations describing nonlinear behaviour of source degenerated common-source transconductance stages, differential-pairs, common-gate and cascode amplifier stages are derived. A comparison between capacitive, resistive and inductive degeneration is performed. Emphasis is given on the effect of design parameters such as transistor width and DC-bias currents on the performance

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; differential amplifiers; integrated circuit design; DC-bias currents; RF CMOS amplifiers; cascode amplifier stages; common-gate amplifier stages; design parameters; differential-pairs; inductive degeneration; nonlinear behaviour; nonlinearities; source degenerated common-source transconductance stages; transistor width; Circuits; Design methodology; Differential equations; Impedance matching; Linearity; MOSFETs; Radio frequency; Radiofrequency amplifiers; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.812242

Filename

812242