Title :
Analysis of silicon carbide power device performance
Author :
Bhatnagar, M. ; Baliga, B.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The authors attempt to define the drift region properties of SiC based rectifiers and MOSFETs to achieve breakdown voltages ranging from 50 to 5000 V. Using these values, the output characteristics of these devices have been calculated. It has been found that 5000-V SiC Schottky rectifiers and power MOSFETs would operate with a forward drop of less than 2 V due to the very low drift region resistance. This value is superior to that for silicon P-i-N rectifiers and gate-turn-off thyristors
Keywords :
Schottky-barrier diodes; insulated gate field effect transistors; power transistors; semiconductor materials; silicon compounds; solid-state rectifiers; 50 to 5000 V; MOSFETs; Schottky rectifiers; SiC based rectifiers; breakdown voltages; drift region properties; drift region resistance; output characteristics; power device performance; Aerospace materials; Electron mobility; MOSFETs; Performance analysis; Power supplies; Rectifiers; Semiconductor materials; Silicon carbide; Switches; Thermal conductivity;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146093
