Title :
A fully integrated 1 GHz BiCMOS VCO
Author :
Zohios, Jerusinaos ; Kramer, Brad ; Ismail, Mohammed
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
A low phase noise monolithic VCO using Cu high-Q spiral inductors is presented. A new feature is the use of current mirrors to provide ratioed gain, low voltage operation and high output swing with low power consumption. The circuit has been designed in an advanced 0.6 μm BiCMOS technology. Tuning is performed using on-chip Schottky barrier diode varactors, providing 72 MHz tuning range around a 1.04 GHz center frequency. At 600 kHz offset from the carrier the simulated phase noise level is -122 dBc/Hz which meets GSM requirements. The oscillator draws 7 mA from a 3 V supply voltage and can properly operate with a supply above 1 V
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; circuit tuning; integrated circuit noise; low-power electronics; phase noise; varactors; voltage-controlled oscillators; 0.6 micron; 1 GHz; 1 to 3 V; 21 W; 7 mA; 900 MHz to 1.04 GHz; BiCMOS VCO; Cu; Cu high-Q spiral inductors; GSM transceivers; RFIC; UHF IC; current mirrors; high output swing; low phase noise VCO; low power consumption; low voltage operation; monolithic VCO; onchip Schottky barrier diode varactors; ratioed gain; varactor tuning; BiCMOS integrated circuits; Circuit optimization; Energy consumption; Inductors; Low voltage; Mirrors; Phase noise; Spirals; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location :
Pafos
Print_ISBN :
0-7803-5682-9
DOI :
10.1109/ICECS.1999.812256
