DocumentCode
348583
Title
A high speed BiCMOS tristate buffer circuit
Author
Suriyaammaranon, C. ; Dejhan, Kobchai ; Cheevasuvit, F. ; Soonyeekan, Chatcharin
Author_Institution
Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Volume
1
fYear
1999
fDate
1999
Firstpage
197
Abstract
This paper presents a novel high speed BiCMOS tristate buffer for driving a large capacitive load by using the pass transistor technique to achieve a single MOS driving bipolar transistor. With a single MOS driving, it can increase the driving capability as well as reduce the number of large MOS transistors that are required to drive a bipolar compared with previous designs. In addition, the feedback circuit to achieve a full-swing operation from supply voltage to ground is added. The simulation results for the switching characteristics, rise time, fall time and base current during enable as well as the voltage waveform during disable have been presented
Keywords
BiCMOS logic circuits; buffer circuits; circuit feedback; high-speed integrated circuits; logic design; BiCMOS buffer circuit; MOS driving bipolar transistor; base current; capacitive load; disable state; driving capability; enable state; fall time; feedback circuit; full-swing operation; high speed buffer circuit; pass transistor technique; rise time; switching characteristics; tristate buffer circuit; voltage waveform; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; CMOS technology; Circuit simulation; Feeds; Inverters; MOSFETs; Signal generators; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location
Pafos
Print_ISBN
0-7803-5682-9
Type
conf
DOI
10.1109/ICECS.1999.812257
Filename
812257
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