Title :
High-Field Electron Mobility in Biaxially-tensile Strained SOI: Low Temperature Measurement and Correlation with the Surface Morphology
Author :
Bonno, O. ; Barraud, S. ; Andrieu, F. ; Mariolle, D. ; Rochette, F. ; Cassé, M. ; Hartmann, J.-M. ; Bertin, F. ; Faynot, O.
Author_Institution :
CEA/LETI Minatec, Grenoble
Abstract :
The high field mobility enhancement in sSOI devices is still unexplained as for now. This work proposes an experimental and theoretical investigation of the physical mechanisms responsible for such a gain. For the first time, we show by atomic force microscopy (AFM) measurements that the surface roughness of sSi is drastically reduced compared to unstrained Si. Introduced into a Kubo-Greenwood model, this improved roughness perfectly reproduces the experimental mobility enhancement at high effective fields (ges1 MV/cm) for a wide range of temperature (50 K-300 K).
Keywords :
atomic force microscopy; electron mobility; silicon-on-insulator; surface roughness; AFM; Kubo-Greenwood model; atomic force microscopy measurements; biaxially-tensile strained SOI; high-field electron mobility; surface morphology; surface roughness; Atomic force microscopy; Atomic measurements; Electron mobility; Force measurement; Rough surfaces; Surface morphology; Surface roughness; Temperature distribution; Temperature measurement; Time measurement;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339757
