Title :
A study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy
Author :
Wang, Lianwei ; Lin, Chenglu ; Chen, Xiangdong ; Zou, Shichang ; Zhou, Zuyao ; Liu, Xianghuai
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film
Keywords :
annealing; arsenic; doping profiles; ion implantation; iron compounds; semiconductor epitaxial layers; semiconductor materials; β-FeSi2 film; As dopant redistribution; FeSi2:As; annealing; diffusion; reactive deposition epitaxy; surface silicide layer; Annealing; Atomic layer deposition; Epitaxial growth; Ion beams; Iron; Molecular beam epitaxial growth; Semiconductor films; Silicides; Silicon; Solids;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586528
