• DocumentCode
    3485880
  • Title

    A study on the As redistribution in β-FeSi2 film prepared by reactive deposition epitaxy

  • Author

    Wang, Lianwei ; Lin, Chenglu ; Chen, Xiangdong ; Zou, Shichang ; Zhou, Zuyao ; Liu, Xianghuai

  • Author_Institution
    Inst. of Metall., Acad. Sinica, Shanghai, China
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    721
  • Lastpage
    724
  • Abstract
    In this paper, we report on the As redistribution properties in β-FeSi2 prepared by reactive deposition epitaxy. Unlike the case of solid phase epitaxy, no snow plough effect has been found. Arsenic atoms become resident in the surface silicide layer, indicating that the diffusion process during the reactive deposition is different from the case of solid phase epitaxy. Further annealing drive the arsenic atoms out of the film
  • Keywords
    annealing; arsenic; doping profiles; ion implantation; iron compounds; semiconductor epitaxial layers; semiconductor materials; β-FeSi2 film; As dopant redistribution; FeSi2:As; annealing; diffusion; reactive deposition epitaxy; surface silicide layer; Annealing; Atomic layer deposition; Epitaxial growth; Ion beams; Iron; Molecular beam epitaxial growth; Semiconductor films; Silicides; Silicon; Solids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586528
  • Filename
    586528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485880