• DocumentCode
    3485901
  • Title

    A V-band power amplifier in 0.13-um CMOS (invited paper)

  • Author

    Kuo, Jing-Lin ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2008
  • fDate
    16-20 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, a V-band CMOS power amplifier fabricated using 0.13-mum CMOS process is presented with a maximum output power of 14.3 dBm and a PidB of 11.2 dBm at 55 GHz. The linear gain is 15.5 dB, and the maximum PAE is 8 %.
  • Keywords
    CMOS integrated circuits; power amplifiers; CMOS process; V-band power amplifier; frequency 55 GHz; gain 15.5 dB; size 0.13 mum; CMOS process; CMOS technology; Circuit simulation; Gain; High power amplifiers; Power amplifiers; Power generation; Power measurement; Solid state circuits; Wireless personal area networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008. APMC 2008. Asia-Pacific
  • Conference_Location
    Macau
  • Print_ISBN
    978-1-4244-2641-6
  • Electronic_ISBN
    978-1-4244-2642-3
  • Type

    conf

  • DOI
    10.1109/APMC.2008.4958262
  • Filename
    4958262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485901