Title :
Designs of 60 GHz front-ends in SiGe BiCMOS technology
Author :
Sun, Yaoming ; Glisic, Srdjan
Author_Institution :
IHP, Frankfurt Oder
Abstract :
This paper reports a newly fabricated 60 GHz front-end (FE) in a 0.25 um SiGe BiCMOS technology. The TX and RX FE chips have been mounted onto application boards through wire-bonding. Maximum error-free transmission is 5 meter in a typical indoor environment with an OFDM modulation. A differential Colpitts VCO has been designed to improve the phase noise performance. Its tuning range is from 55 to 57.9 GHz. The measured phase noise is 100.5 dBc/Hz at 1 MHz offset.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; microwave integrated circuits; BiCMOS technology; OFDM modulation; RX front end chips; SiGe; TX front end chips; differential Colpitts VCO; frequency 55 GHz to 57.9 GHz; frequency 60 GHz; size 0.25 mum; wire-bonding; BiCMOS integrated circuits; Germanium silicon alloys; Indoor environments; Iron; Noise measurement; OFDM modulation; Phase measurement; Phase noise; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
DOI :
10.1109/APMC.2008.4958264
