Title :
A Novel Hafnium Carbide (HfCx) Metal Gate Electrode for NMOS Device Application
Author :
Hwang, Wan Sik ; Shen, Chen ; Wang, Xing Peng ; Chan, Daniel S H ; Cho, Byung Jin
Author_Institution :
Nat. Univ. of Singapore, Singapore
Abstract :
Hafnium carbide (HfCx) is investigated as a novel metal gate electrode with good thermal stability for the first time. HfCx shows a very low work function of 3.8 eV on HfO2, suitable for NMOS device applications, and provides superior oxygen diffusion barrier properly during high temperature annealing. In addition, there is no sign of significant Fermi level pinning with HfO2 dielectric.
Keywords :
MOS integrated circuits; electrodes; hafnium compounds; thermal stability; HfC; NMOS device; hafnium carbide metal gate electrode; high temperature annealing; oxygen diffusion barrier properly; thermal stability; Annealing; Application software; CMOS process; Electrodes; FCC; Hafnium oxide; Hybrid fiber coaxial cables; MOS devices; Temperature; Thermal stability;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339764
