• DocumentCode
    3486019
  • Title

    Toughening of thin films by high energy ion beams

  • Author

    Jain, Amitabh ; Loganathan, S. ; Jain, Uma

  • Author_Institution
    Indian Inst. of Technol., New Delhi, India
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    733
  • Lastpage
    736
  • Abstract
    Refractory metal films tend to grow with a high degree of intrinsic tensile stress. As the film thickness increases, the integrated stress becomes high enough to cause loss of adhesion. In the present study, when chromium films on the order of 1 μm were irradiated with Ni ions of energy 75 MeV, a reduction in strain as measured by X-ray diffraction was observed. Scratch Adhesion measurements demonstrated that this is accompanied by a large improvement in coating to substrate adherence. A new model is proposed to account for the observed effects and provides a basis on which to engineer stresses in thin films using ion beams. The model pictures mobile interstitials that escape from displacement cascades as nucleating in to loops in preferred orientations. The preferential orientation is a result of the lattice strain. As these aligned loops grow, they introduce a strain of their own which cancels out the initial strain. A mathematical formulation enables prediction of strain with irradiation dose for a given initial stress
  • Keywords
    X-ray diffraction; adhesion; chromium; internal stresses; interstitials; ion beam effects; metallic thin films; refractories; vacuum deposited coatings; 75 MeV; Cr; Ni; X-ray diffraction; displacement cascade; interstitial loop nucleation; intrinsic tensile stress; ion beam irradiation; lattice strain; preferential orientation; refractory metal thin film; scratch adhesion; toughening; Adhesives; Capacitive sensors; Chromium; Energy measurement; Ion beams; Optical films; Strain measurement; Tensile stress; Transistors; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586536
  • Filename
    586536