DocumentCode
3486033
Title
Challenges at 45nm and beyond
Author
Bailey, Dan ; Soenen, Eric ; Gupta, Puneet ; Villarrubia, Paul ; Sang Dhong
Author_Institution
Advanced Micro Devices, Inc., Austin, TX, USA
fYear
2008
fDate
10-13 Nov. 2008
Abstract
Design at 45nm technologies and below is a risky proposition because of the many design challenges involved: variability, leakage, verification complexity, poor analog device performance, etc. In this panel, experienced designers coming from different backgrounds talk about how they have overcome some of the design and CAD challenges in 45nm, what CAD challenges still exist and how the CAD community can help.
Keywords
CMOS technology; Circuit simulation; Costs; DH-HEMTs; Design automation; Environmental economics; Moore´s Law; Physics; Process design; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2008. ICCAD 2008. IEEE/ACM International Conference on
Conference_Location
San Jose, CA, USA
ISSN
1092-3152
Print_ISBN
978-1-4244-2819-9
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2008.4681538
Filename
4681538
Link To Document