DocumentCode :
3486169
Title :
R-2: The status and prognosis for high-κ/ metal gate transistors
Author :
Nara, Yumiko ; Lee, Jong Chul ; Bohr, M. ; Chung, U-I. ; Imai, Koichi ; Khare, Manish ; Lee, Bi-Hui ; Tsunashima, Y.
Author_Institution :
Selete
fYear :
2007
fDate :
12-14 June 2007
Firstpage :
151
Lastpage :
151
Keywords :
Atomic layer deposition; CMOS technology; Electrodes; High K dielectric materials; High-K gate dielectrics; Lithography; Logic devices; Moore´s Law; Stress; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
Type :
conf
DOI :
10.1109/VLSIT.2007.4339773
Filename :
4339773
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3486169
