Design of a Ku-band high gain low noise amplifier

Author

Bashir, M.A. ; Ahmed, M.M. ; Rafique, U. ; Memon, Q.D.

Author_Institution

Dept. of Electr. Eng., Bahauddin Zakariya Univ., Multan, Pakistan

fYear

2013

fDate

9-11 Dec. 2013

Firstpage

168

Lastpage

171

Abstract

A single stage low noise amplifier is developed for Ku-band applications. The design is aimed to provide low noise figure and high associated gain. Submicron gate length GaAs MESFET is used as an active device because of its superior high frequency properties. Device equivalent circuit parameters are first evaluated with and without pad capacitors using measured S-parameters. Low noise amplifier is then designed by employing common source configuration. Additional circuit components are employed to achieve unconditional stability. Whereas, matching networks of different types are evaluated to achieve VSWR closer to unity. Simulated data showed a bandwidth of 1.63 GHz with minimum noise figure 1.02 dB and 14.1 dB associated gain.

Keywords

III-V semiconductors; MESFET circuits; S-parameters; gallium arsenide; low noise amplifiers; microwave amplifiers; GaAs; Ku-band high gain low noise amplifier; S-parameter; bandwidth 1.63 GHz; equivalent circuit parameters; gain 14.1 dB; noise figure 1.02 dB; single stage low noise amplifier; submicron gate length MESFET; Gain; Gallium arsenide; Low-noise amplifiers; MESFETs; Microwave amplifiers; Noise figure; Stability analysis; Common source configuration; GaAs MESFET; Ku-band; Low noise amplifier; Single stage; Unconditional stability;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference (RFM), 2013 IEEE International

Conference_Location

Penang

Print_ISBN

978-1-4799-2213-0

Type

conf

DOI

10.1109/RFM.2013.6757241

Filename

6757241