DocumentCode
3486327
Title
Modeling the near-gap dielectric properties of strained-layer multiple quantum wells and superlattices
Author
Trivedi, Dhrupad ; Anderson, Neal G.
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
291
Abstract
We have developed a comprehensive approach to the calculation of the full complex permittivity tensor of an arbitrary direct-gap strained-layer superlattice (SLS) at frequencies near the fundamental band gap. The model utilizes a combination of strain-dependent superlattice K.p and nearest-neighbor tight-binding supercell models of SLS electronic structure, which is designed to provide band structures throughout the full SLS Brillouin zone which are highly accurate near the band edges. In this work, we will provide a detailed description of our approach and results of sample calculations illustrating the effects of tensile and compressive layer strains on the polarization dependence of SLS refractive index
Keywords
semiconductor quantum wells; K.p modelling; SLS electronic structure; SLS refractive index; arbitrary direct-gap strained-layer superlattice; band structures; compressive layer strains; full SLS Brillouin zone; full complex permittivity tensor; fundamental band gap; near-gap dielectric properties; nearest-neighbor tight-binding supercell models; polarization dependence; strain-dependent superlattice; strained-layer multiple quantum wells; strained-layer superlattices; tensile strains; Dielectrics; Frequency; Laser sintering; Permittivity; Photonic band gap; Polarization; Refractive index; Superlattices; Tensile strain; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586555
Filename
586555
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