DocumentCode :
3486327
Title :
Modeling the near-gap dielectric properties of strained-layer multiple quantum wells and superlattices
Author :
Trivedi, Dhrupad ; Anderson, Neal G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
2
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Firstpage :
291
Abstract :
We have developed a comprehensive approach to the calculation of the full complex permittivity tensor of an arbitrary direct-gap strained-layer superlattice (SLS) at frequencies near the fundamental band gap. The model utilizes a combination of strain-dependent superlattice K.p and nearest-neighbor tight-binding supercell models of SLS electronic structure, which is designed to provide band structures throughout the full SLS Brillouin zone which are highly accurate near the band edges. In this work, we will provide a detailed description of our approach and results of sample calculations illustrating the effects of tensile and compressive layer strains on the polarization dependence of SLS refractive index
Keywords :
semiconductor quantum wells; K.p modelling; SLS electronic structure; SLS refractive index; arbitrary direct-gap strained-layer superlattice; band structures; compressive layer strains; full SLS Brillouin zone; full complex permittivity tensor; fundamental band gap; near-gap dielectric properties; nearest-neighbor tight-binding supercell models; polarization dependence; strain-dependent superlattice; strained-layer multiple quantum wells; strained-layer superlattices; tensile strains; Dielectrics; Frequency; Laser sintering; Permittivity; Photonic band gap; Polarization; Refractive index; Superlattices; Tensile strain; Tensile stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586555
Filename :
586555
Link To Document :
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