Design of RF integrated circuits using SiGe bipolar technology

Author

Götzfried, Rainer ; Beisswanger, Frank ; Gerlach, Stephan

Author_Institution

TEMIC Telefunken Microelectron., Hellbronn, Germany

fYear

1997

fDate

28-30 Sep 1997

Firstpage

51

Lastpage

56

Abstract

We report on design aspects and the implementation of RF ICs using TEMIC´s SiGe heterojunction bipolar technology. The differences between the device parameters of Si-BJT and SiGe-HBT technology and their influence on IC design are discussed. Design and measurement results of RF ICs, including low-noise-amplifier, power-amplifier and SPDT antenna switch for application in a 1.9 GHz DECT RF front-end are presented

Keywords

Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; cordless telephone systems; heterojunction bipolar transistors; integrated circuit design; semiconductor materials; 1.9 GHz; DECT RF front-end; HBT technology; IC design; RF integrated circuits; SiGe; TEMIC; antenna switch; bipolar technology; device parameters; low-noise-amplifier; power-amplifier; Antenna measurements; Bipolar integrated circuits; Germanium silicon alloys; Heterojunctions; Integrated circuit measurements; Integrated circuit technology; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647354

Filename

647354