Title :
Ion implantation by plasma immersion technique
Author :
Thomae, R. ; Bender, Hugo ; Klein, H. ; Schafer, Jochen ; Seiler, Bettina
Author_Institution :
Inst. fur Angewandte Phys., Frankfurt Univ.
Abstract :
Plasma immersion ion implantation (PIII) is technique for surface modification. In contrast to conventional ion implantation techniques the target is surrounded by the plasma and then pulse biased to high negative voltages. The plasma is generated in a rf source (13.56 MHz) and diffuses into the target processing chamber. In this paper we report on the influence of copper deposition effects on the implantation of oxygen and argon ions into a silicon target
Keywords :
elemental semiconductors; ion implantation; silicon; 13.56 MHz; Ar; Cu; O; RF source; Si; copper deposition; diffusion; plasma immersion ion implantation; silicon target; surface modification; Atomic measurements; Copper; Ion implantation; Plasma accelerators; Plasma immersion ion implantation; Plasma measurements; Plasma sheaths; Plasma sources; Silicon; Voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586557
