DocumentCode :
3486518
Title :
Quantum Hall resistance standard based on graphene
Author :
Janssen, T.J.B.M. ; Tzalenchuk, A.
Author_Institution :
Nat. Phys. Lab., Teddington, UK
fYear :
2010
fDate :
13-18 June 2010
Firstpage :
579
Lastpage :
580
Abstract :
We present a detailed study of ρxx and ρxy measured on a large high-quality epitaxially grown graphene sample. We have investigated the bias current, temperature, and magnetic field dependence and demonstrate quantization better than 1 part in 108. This level of accuracy easily satisfies all the usual criteria for reliable traceability based on the quantum Hall effect.
Keywords :
graphene; quantum Hall effect; bias current; high-quality epitaxially grown graphene; magnetic field dependence; quantum Hall effect; quantum Hall resistance standard; temperature dependence; Current measurement; Electrical resistance measurement; Electromagnetic measurements; Electrons; Hall effect; Magnetic field measurement; Magnetic materials; Plasma temperature; Quantization; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
Type :
conf
DOI :
10.1109/CPEM.2010.5544799
Filename :
5544799
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3486518
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