A study of switchable dual-frequency oscillator for 60 GHz FSK modulation

Author

Kitazawa, Shoichi ; Taromaru, Makoto ; Ueba, Masazumi

Author_Institution

ATR Wave Eng. Labs., Seika

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

This paper reports on practical study of a switchable dual-frequency oscillator for 60-GHz binary FSK modulation, using a 0.15 mum commercial GaAs p-HEMT technology. The oscillator obtained an output power of 1.8 dBm at 61.43 GHz with a phase noise of -65dBc/Hz at 100 kHz offset and -87dBc/Hz at 1MHz offset to the carrier at the free-run state. A 500 Mbit/s FSK modulation was confirmed with the developed oscillator. This type of oscillator is feasible for of multi-gigabit data rate FSK modulation.

Keywords

HEMT integrated circuits; III-V semiconductors; MIMIC; frequency shift keying; gallium arsenide; millimetre wave oscillators; GaAs; HEMT integrated circuits; MIMIC; bit rate 500 Mbit/s; frequency 60 GHz; frequency 61.43 GHz; frequency shift keying; size 0.15 mum; switchable dual-frequency oscillator; Circuits; Frequency shift keying; Phase noise; Phase shift keying; Power generation; Quadrature amplitude modulation; Standardization; Switches; Turning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958296

Filename

4958296